Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
スポンサーリンク
概要
- 論文の詳細を見る
To fabricate a metal oxide semiconductor field-effect transistor (MOSFET) with a three-dimensional (3D) structure, several problems arise in the conventional thermal oxidation (TO) process, such as leakage current, shape nonuniformity, stress concentration, and the dependence of the oxidation rate on the lattice plane of Si. To overcome these problems, we propose low-temperature (${<}300$ °C) neutral beam oxidation (NBO) as an alternative oxidation process. We found that an oxide film grown by NBO (NBO film) exhibits performance characteristics of a gate dielectric film that are as high as those of thermal oxide films in terms of the relationship between equivalent oxide thickness (EOT) and leakage current. The rate of NBO is also independent of the lattice plane of Si, while the oxidation is beam orientation dependent. Therefore, growing oxide films by NBO is advantageous, in that the method can be applied to gate dielectric films for the 3D fin structure of field-effect transistors (FinFETs) and surrounding gate transistors (SGTs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
-
MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
-
MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
-
Samukawa Seiji
Institute Of Fluid Science Tohoku University
-
Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Ikoma Toru
Institute Of Fluid Science Tohoku University
-
Masahara Meishoku
National Institute of Advanced Industrial Science and Technology, 2-13 Tsukuba Central, Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
YONEMOTO Masahiro
Institute of Fluid Science, Tohoku University
-
Yonemoto Masahiro
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
-
Sano Keisuke
Institute of Fluid Science, Tohoku University, 2-1-1 Katahiara, Aoba-ku, Sendai 980-8577, Japan
-
Sano Keisuke
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
-
Ikoma Toru
Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
関連論文
- Ultrathin Oxynitride Films Formed by Using Pulse-Time-Modulated Nitrogen Beams
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Novel Stacked Nanodisk with Quantum Effect Fabricated by Defect-free Chlorine Neutral Beam Etching
- A New Silicon Quantum-Well Structure with Controlled Diameter and Thickness Fabricated with Ferritin Iron Core Mask and Chlorine Neutral Beam Etching
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Control of Electron Transport in Two-Dimensional Array of Si Nanodisks for Spiking Neuron Device
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
- Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma
- Nonscalability of Alpha-Particle-Induced Charge Collection Area
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- Undiagnosed sick sinus syndrome manifest during combined general and cervical epidural anesthesia
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- Significant Increase in Blood Pressure after Discontinuation of Propofol Following Cardiac Surgery
- Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
- Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
- Optical Diagnostics of a Pulsed Inductively Coupled Nitrogen Plasma
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
- Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
- Effects of Thermal Annealing for Restoration of UV Irradiation Damage during Plasma Etching Processes
- Effects of CF_3I Plasma for Reducing UV Irradiation Damage in Dielectric Film Etching Processes
- On-Wafer Monitoring of Vacuum-Ultraviolet Radiation Damage in High-Density Plasma Processes
- High-Efficiency Low Energy Neutral Beam Generation Using Negative Ions in Pulsed Plasma
- High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias : Nuclear Science, Plasmas, Electric Dischanges
- Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- High-Performance Three-Terminal Fin Field-Effect Transistors Fabricated by a Combination of Damage-Free Neutral-Beam Etching and Neutral-Beam Oxidation
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- Reduction in Number of Sparks Generated in High-Density Plasma Process by Fixing the Wall Potential
- Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
- Electron Emission from Indium Tin Oxide/Silicon Monoxide/Gold Structure
- Novel Particle-Reduction System in Plasma-Enhanced Chemical Vapor Deposition Process of Interlayer Dielectrics
- High-Performance and Damage-Free Magnetic Film Etching using Pulse-Time-Modulated Cl2 Plasma
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Effects of Plasma Power and Plasma Sheath on Field Emission Properties of Carbon Nanotubes
- Magnetically Damage-free Etching of MTJ Film for Future 0.24-μm-rule MRAMs
- Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
- Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
- Irradiation-Damages in Atmospheric Plasma Used in a Resist Ashing Process for Thin Film Transistors
- Direct Fabrication of Uniform and High Density Sub-10-nm Etching Mask Using Ferritin Molecules on Si and GaAs Surface for Actual Quantum-Dot Superlattice
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Super-Low-k SiOCH Film with Sufficient Film Modulus and High Thermal Stability Formed by Using Admixture Precursor in Neutral-Beam-Enhanced Chemical Vapor Deposition (Special Issue : Advanced Metallization for ULSI Applications)
- Two-Dimensional Si-Nanodisk Array Fabricated Using Bio-Nano-Process and Neutral Beam Etching for Realistic Quantum Effect Devices
- Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- High-Frequency Precise Characterization of Intrinsic FinFET Channel
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
- Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- New Magnetic Nanodot Memory with FePt Nanodots
- Plasma-Radiation-Induced Interface States in Metal-Nitride-Oxide-Silicon Structure of Charge-Coupled Device Image Sensor and Their Reduction Using Pulse-Time-Modulated Plasma
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Independent-Double-Gate FinFET SRAM Technology
- Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
- Reduction of Moisture in Semiconductor Dry Process Equipment by Generating Extremely Low Oxygen Ambience
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
- Ultimate Top-down Etching Processes for Future Nanoscale Devices: Advanced Neutral-Beam Etching