Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)

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概要

• 論文の詳細を見る

著者

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• YAMAUCHI Hiromi

  National Institute of Advanced Industrial Science and Technology

• ISHIKAWA Yuki

  National Institute of Advanced Industrial Science and Technology

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Sakamoto Kunihiro

  National Institute Of Advanced Industrial Science And Technology (aist)

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Tsukada Junichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Hayashida Tetsuro

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Kamei Takahiro

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Guo Ruofeng

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

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