Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation

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概要

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• A strained SiGe layer will be used in next-generation transistors to improve device performance along with device scaling. However, the stress relaxation of the SiGe layer may be inevitable in nanodevices, because the SiGe layer is processed into a nanostructure. In this study, we evaluated the anisotropic stress relaxation in mesa-shaped strained SiGe layers on a Si substrate by electron backscattering pattern (EBSP) measurement. Moreover, we compared the results of EBSP measurement with those of anisotropic Raman measurement and finite element method (FEM) simulation. As a result, the anisotropic stress relaxation obtained by Raman spectroscopy was confirmed by EBSP measurement. Additionally, we obtained a good correlation between the results of EBSP measurement and FEM simulation. The \sigma_{xx} and \sigma_{yy} stresses were markedly relaxed and the \sigma_{zz} and \sigma_{xz} stresses were concentrated at the SiGe layer edges. These stresses were mostly relaxed in the distance range from the SiGe layer edges to 200 nm. Therefore, in a SiGe nanostructure with a scale of less than 200 nm, stress relaxation is inevitable. The results of EBSP and Raman measurements, and FEM simulation show a common tendency. We believe that EBSP measurement is useful for the evaluation of stress tensors and is complementary to Raman measurement.

• 2013-04-25

著者

• Kosemura Daisuke

  School Of Science And Engineering Meiji University

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Tomita Motohiro

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Usuda Koji

  Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan

• Ogura Atsushi

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• USUDA Koji

  Collaborative Research Team Green Nanoelectronics Center, AIST

• Tomita Motohiro

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Nagasaka Masaya

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Tezuka Tsutomu

  Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan

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