Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells

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概要

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• We evaluated the three types of composition spread passivation layer, i.e., Al2O3--HfO2, HfO2--Y2O3, and Al2O3--Y2O3 systems, by combinatorial pulsed laser deposition to evaluate and control the fixed charge, while interface states were kept constant with a SiO2 interlayer. The flat-band voltage of the capacitance--voltage ($C$--$V$) curves was shifted widely from positive to negative by changing the composition. The calculated fixed charge in the Y2O3 was positive while those in the HfO2 and Al2O3 were negative. In the Al2O3--Y2O3 system, the fixed charge was significantly varied between $-2.7$ and $1.3\times 10^{12}$ cm-2 with composition spread. The maximum negative charge was found in the Al2O3 layer with a slight amount of Y2O3, while the maximum positive charge was realized with almost pure Y2O3. The fixed charge modifications were also found in the Al2O3--HfO2 and HfO2--Y2O3 systems. Additional oxidation after layer deposition also modified the fixed charge properties. The largest negative fixed charge of $-3.1\times 10^{12}$ cm-2 was found in approximately $\text{HfO$_{2}$}:\text{Y$_{2}$O$_{3}$}=1:1$ after the annealing process, while the largest positive charge of $1.3\times 10^{12}$ cm-2 was found for Y2O3 with Al2O3 incorporation. The passivation layers with controlled fixed charge can be promising materials for the high-quality passivation layer in crystalline silicon solar cells.

• 2011-04-25

著者

• Chikyow Toyohiro

  National Inst. Materials Sci. Ibaraki Jpn

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Iwashita Yuta

  School of Science and Technology, Meiji University, Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Kiyota Yuji

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Tachibana Tomihisa

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Arafune Koji

  Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan

• Tachibana Tomihisa

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Sameshima Takashi

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Yoshida Haruhiko

  Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan

• Satoh Shin-ichi

  Graduate School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan

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