Characterization of Strain in Si for High Performance MOSFETs
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Kosemura Daisuke
School Of Science And Technology Meiji University
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Ogura Atsushi
School Of Science And Technology Meiji University
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Kohno Masayuki
Tokyo Electron At Spa Development Engineering Dept.
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KAKEMURA Yasuto
School of Science and Technology, Meiji University
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YOSHIDA Tetsuya
School of Science and Technology, Meiji University
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NISHITA Tatsuo
TOKYO ELECTRON AT, SPA Development Engineering Dept.
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NAKANISI Toshio
TOKYO ELECTRON AT, SPA Development Engineering Dept.
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Nishita Tatsuo
Tokyo Electron At Spa Development Engineering Dept.
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Kakemura Yasuto
School Of Science And Technology Meiji University
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Yoshida Tetsuya
School Of Science And Technology Meiji University
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Nakanisi Toshio
Tokyo Electron At Spa Development Engineering Dept.
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- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
- Characterization of Strain in Si for High Performance MOSFETs
- Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
- Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
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