Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
Phonon deformation potentials (PDPs) in Si1-xGex were investigated by oil-immersion Raman spectroscopy. Transverse optical (TO) and longitudinal optical (LO) phonon modes were separately excited for strained Si1-xGex as well as strained Si. PDPs p and q were derived with the use of the Raman wavenumber shifts of TO and LO. The obtained PDPs for Si, SiGe0.153, and SiGe0.297 were compared with one another. Furthermore, the strain-shift coefficient was also obtained and compared with the previously reported values. The p and q values allow us to precisely evaluate anisotropic biaxial stress states in Si and Si1-xGex by oil-immersion Raman spectroscopy.
- 2012-11-25
著者
-
Kosemura Daisuke
School Of Science And Engineering Meiji University
-
Ogura Atsushi
School Of Science And Engineering Meiji University
-
Usuda Koji
Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
関連論文
- Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
- Characterization of Strain in Si for High Performance MOSFETs
- Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
- Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
- Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
- Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials (1))
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners
- Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor
- Evaluation of Strain in Si-on-Insulator Substrate Induced by Si3N4 Capping Film
- Two-Dimensional Anisotropic Lattice Deformation Observed in a Commercially Available Strained-Si Wafer
- Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy
- Channel Strain Measurement in 32-nm-Node Complementary Metal--Oxide--Semiconductor Field-Effect Transistor by Raman Spectroscopy
- Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens
- Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
- Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
- Measurement of Anisotropic Biaxial Stresses in Si
- UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Investigation of Phonon Deformation Potentials in Si_Ge_x by Oil-Immersion Raman Spectroscopy
- Structure Analyses of Room Temperature Deposited AlO
- Ge
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
- Measurement of Anisotropic Biaxial Stresses in Si₁₋xGe[x]/Si Mesa Structures by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials)