UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si
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概要
- 論文の詳細を見る
We developed a new UV-Raman spectroscopy system for local and global strain measurements in Si. Using a 364 nm excitation laser, strain in an ultra-thin Si film can be measured. Because of the resonance effect using this particular wave length, reasonably short measurement time is realized to obtain strain mapping with keeping the sample at sufficiently low temperature. An in situ wavenumber calibration system has been newly developed for superior wavenumber resolution and precision of approximately 0.1 cm-1. A quasi-line shape excitation light source has also been developed to verify the effective spatial resolution. Strain mapping and spectral measurements for relaxation by rapid thermal annealing in strained-Si substrates are demonstrated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Shimidzu Ryosuke
Photon Design Co. Ltd.
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Ogura Atsushi
School Of Science And Engineering Meiji University
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CHIBA Ichiro
PHOTON Design Corporation
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TANAKA Satoshi
School of Science and Engineering, Meiji University
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Yamasaki Kosuke
School Of Science And Engineering Meiji University
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Ogura Atsushi
School of Science and Engineering, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Yamasaki Kosuke
School of Science and Engineering, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Chiba Ichiro
PHOTON Design Corporation, 24-6 Kamiya 2-chome, Kita-ku, Tokyo 115-0043, Japan
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Kosemura Daisuke
School of Science and Engineering, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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