Kosemura Daisuke | School Of Science And Engineering Meiji University
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概要
関連著者
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Takei Munehisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Nagata Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Tomita Motohiro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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USUDA Koji
Collaborative Research Team Green Nanoelectronics Center, AIST
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Kohno Masayuki
Tokyo Electron At Spa Development Engineering Dept.
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Nishita Tatsuo
Tokyo Electron At Spa Development Engineering Dept.
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Kakemura Yasuto
School Of Science And Technology Meiji University
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Yoshida Tetsuya
School Of Science And Technology Meiji University
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Akamatsu Hiroaki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Tezuka Tsutomu
Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Nakanishi Toshio
Tokyo Electron At Ltd. Hyogo Jpn
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Shimidzu Ryosuke
Photon Design Co. Ltd.
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CHIBA Ichiro
PHOTON Design Corporation
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TANAKA Satoshi
School of Science and Engineering, Meiji University
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Yamasaki Kosuke
School Of Science And Engineering Meiji University
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Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Hashiguchi Hiroki
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Hiroaki Akamatsu
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Usuda Koji
Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Ota Hiroyuki
National Institute Of Advanced Industrial Science And Technology
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LIU Yongxun
National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
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YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
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ISHIKAWA Yuki
National Institute of Advanced Industrial Science and Technology
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HATTORI Nobuyoshi
Semiconductor Technology Academic Research Center
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Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Migita Shinji
National Institute Of Advanced Industrial Science And Technology
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Shimidzu Ryosuke
Photon Design Corporation
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Morita Yukinori
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Kosemura Daisuke
School Of Science And Technology Meiji University
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Ogura Atsushi
School Of Science And Technology Meiji University
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Yoshimaru Masaki
Semiconductor R&d Division Semiconductor Business Group Oki Electric Industry Co. Ltd.
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YAMASAKI Kosuke
School of Science and Engineering, Meiji University
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KAKEMURA Yasuto
School of Science and Technology, Meiji University
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YOSHIDA Tetsuya
School of Science and Technology, Meiji University
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NISHITA Tatsuo
TOKYO ELECTRON AT, SPA Development Engineering Dept.
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NAKANISI Toshio
TOKYO ELECTRON AT, SPA Development Engineering Dept.
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Nakanisi Toshio
Tokyo Electron At Spa Development Engineering Dept.
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Tsukada Junichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Tsukada Junichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Masahara Meishoku
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Hayashida Tetsuro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Kamei Takahiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Mizubayashi Wataru
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Matsukawa Takashi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Jin-Young Son
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Migita Shinji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Yoshihiro Hirota
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Yamaguchi Takuya
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Kohki Nagata
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Nagata Kohki
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Munehisa Takei
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Takei Munehisa
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Noda Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Maki Hattori
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Daisuke Katayama
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Tatsuo Nishita
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Masatake Machida
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Tomoyuki Koganezawa
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Ichiro Hirosawa
Japan Synchrotron Radiation Research Institute (JASRI), 1-1-1 Koto, Sayo, Hyogo 679-5198, Japan
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Ryosuke Shimidzu
PHOTON Design Corporation, 24-6 Kamiya 2-chome, Kita, Tokyo 115-0043, Japan
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Endo Kazuhiko
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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O'uchi Shin-ichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Yoshimaru Masaki
Semiconductor Technology Academic Research Center, 3-17-2 Shinyokohama, Kouhoku-ku, Yokohama 220-0033, Japan
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Hattori Nobuyoshi
Semiconductor Technology Academic Research Center, 3-17-2 Shinyokohama, Kouhoku-ku, Yokohama 220-0033, Japan
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Uchida Hidetsugu
Semiconductor Technology Academic Research Center, 3-17-2 Shinyokohama, Kouhoku-ku, Yokohama 220-0033, Japan
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Ogura Atsushi
School of Science and Engineering, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Ogura Atsushi
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Nishita Tatsuo
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Nishita Tatsuo
Tokyo Electron AT, SPA Development Engineering Dept., 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Morita Yukinori
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Akamatsu Hiroaki
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Kohno Masayuki
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Kohno Masayuki
Tokyo Electron AT, SPA Development Engineering Dept., 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Yamasaki Kosuke
School of Science and Engineering, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Ota Hiroyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Chiba Ichiro
PHOTON Design Corporation, 24-6 Kamiya 2-chome, Kita-ku, Tokyo 115-0043, Japan
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Ishikawa Yuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan
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Tomita Motohiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Nagasaka Masaya
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Nakanishi Toshio
Tokyo Electron AT, SPA Development Engineering Department, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan
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Kosemura Daisuke
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Kosemura Daisuke
School of Science and Engineering, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Usuda Koji
Green Nanoelectronics Collaborative Research Center, AIST, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
- Characterization of Strain in Si for High Performance MOSFETs
- Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
- Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
- Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials (1))
- Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners
- Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor
- Evaluation of Strain in Si-on-Insulator Substrate Induced by Si3N4 Capping Film
- Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy
- Channel Strain Measurement in 32-nm-Node Complementary Metal--Oxide--Semiconductor Field-Effect Transistor by Raman Spectroscopy
- Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens
- Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
- Measurement of Anisotropic Biaxial Stresses in Si
- UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si
- Investigation of Phonon Deformation Potentials in Si_Ge_x by Oil-Immersion Raman Spectroscopy
- Measurement of Anisotropic Biaxial Stresses in Si₁₋xGe[x]/Si Mesa Structures by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials)