Measurement of Anisotropic Biaxial Stresses in Si

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概要

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• Anisotropic biaxial stress states in Si<inf>1-x</inf>Ge<inf>x</inf>/Si mesa structures were evaluated by oil-immersion Raman spectroscopy. Using a high-numerical-aperture lens, the electrical field component perpendicular to the surface, i.e., z-polarization, can be obtained. The z-polarization enables the excitation of the forbidden optical phonon mode, i.e., the transverse optical (TO) phonon mode, even under the backscattering geometry from (001)-oriented diamond-type crystals. The anisotropic biaxial stress evaluation of Si<inf>1-x</inf>Ge<inf>x</inf>was considered difficult compared with that of Si, because many unknown parameters exist for Si<inf>1-x</inf>Ge<inf>x</inf>, e.g., phonon deformation potentials (PDPs), the Ge concentration x, and the factor of Raman shift on x. In this study, PDPs and the Ge concentration in Si<inf>1-x</inf>Ge<inf>x</inf>were investigated in detail. As a result, using precise PDPs and x, a clear dependence of anisotropic biaxial stress states in Si<inf>1-x</inf>Ge<inf>x</inf>on the mesa structure shape was observed.

• 2013-04-25

著者

• Kosemura Daisuke

  School Of Science And Engineering Meiji University

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Tomita Motohiro

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• USUDA Koji

  Collaborative Research Team Green Nanoelectronics Center, AIST

• Tezuka Tsutomu

  Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan

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