Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
スポンサーリンク
概要
著者
-
MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
-
LIU Yongxun
National Institute of Advanced Industrial Science and Technology
-
MATSUKAWA Takashi
National Institute of Advanced Industrial Science and Technology
-
YAMAUCHI Hiromi
National Institute of Advanced Industrial Science and Technology
-
ISHIKAWA Yuki
National Institute of Advanced Industrial Science and Technology
-
Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Sakamoto Kunihiro
National Institute Of Advanced Industrial Science And Technology (aist)
-
Ogura Atsushi
School Of Science And Engineering Meiji University
-
Tsukada Junichi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Hayashida Tetsuro
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
-
Kamei Takahiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
関連論文
- Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
- Nonscalability of Alpha-Particle-Induced Charge Collection Area
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- Undiagnosed sick sinus syndrome manifest during combined general and cervical epidural anesthesia
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- Significant Increase in Blood Pressure after Discontinuation of Propofol Following Cardiac Surgery
- Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
- Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- InGaAs/AlGaAs quantum wire distributed feedback buried hetero-structure laser diode by one time selective metalorganic chemical vapor deposition on ridge substrate
- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- Mechanism of Tungsten Plug Corrosion during Chemical Stripping Process : Scanning Maxwell-Stress Microscopy and Electrochemical Potentiometry Studies
- CHF_3 Plasma Treatment of Si Field Emitter Arrays For No Damage Vacuum Packaging
- Electrical Characteristics of Air-Bridge-Structured Silicon Nanowire Fabricated by Micromachining a Silicon-on-Insulator Substrate
- Fabrication of a Nanometer-Scale Si-Wire by Micromachining of a Silicon-on-Insulator Substrate
- Hybrid Laser Activation of Highly Concentrated Bi Donors in Wire-δ-Doped Silicon
- Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- AlGaAs/InGaAs DFB Laser by One-Time Selective MOCVD Growth on a Grating Substrate
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
- Characterization of Strain in Si for High Performance MOSFETs
- Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
- Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
- Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
- Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
- Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials (1))
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners
- Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor
- Evaluation of Strain in Si-on-Insulator Substrate Induced by Si3N4 Capping Film
- InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate
- Two-Dimensional Anisotropic Lattice Deformation Observed in a Commercially Available Strained-Si Wafer
- Characterization of Highly Concentrated Bi Donors Wire-\delta-Doped in Si
- Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy
- Channel Strain Measurement in 32-nm-Node Complementary Metal--Oxide--Semiconductor Field-Effect Transistor by Raman Spectroscopy
- Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- High-Frequency Precise Characterization of Intrinsic FinFET Channel
- A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
- Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Fabrication of HfC-Coated Si Field Emitter Arrays with Built-in Poly-Si Thin-Film Transistor
- Fabrication of Polycrystalline Silicon Field Emitter Arrays with Hafnium Carbide Coating for Thin-Film-Transistor Controlled Field Emission Displays
- Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process
- Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
- Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
- Measurement of Anisotropic Biaxial Stresses in Si
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si
- 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Independent-Double-Gate FinFET SRAM Technology
- Investigation of Phonon Deformation Potentials in Si_Ge_x by Oil-Immersion Raman Spectroscopy
- Structure Analyses of Room Temperature Deposited AlO
- Ge
- Reduction of Moisture in Semiconductor Dry Process Equipment by Generating Extremely Low Oxygen Ambience
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
- Measurement of Anisotropic Biaxial Stresses in Si₁₋xGe[x]/Si Mesa Structures by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials)
- Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates