Ge
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概要
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This paper describes stoichiometric Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>(GST) film fabrication by the process based on chemical vapor deposition (CVD). GST films were fabricated by tellurization after GeSb CVD. This two step process enabled to fill high aspect holes. By applying appropriate precursors and process temperature, the surface morphology of the GST film was significantly improved. The moderate tellurization reaction process might contribute GST formation with maintaining the amorphous structure of the CVD GeSb. We believe this technique is useful for phase change memory application.
- 2013-12-25
著者
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Ogura Atsushi
School Of Science And Engineering Meiji University
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Sudoh Hiroshi
Gas-Phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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Machida Hideaki
Gas-Phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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Suda Kohei
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Uno Tomohiro
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Miyakawa Tatsuya
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Sawamoto Naomi
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
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Ishikawa Masato
Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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