Ni Thin Film Deposition from Tetrakistrifluorophosphine-Nickel
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概要
- 論文の詳細を見る
The inorganic molecule Ni(PF3)4 is a candidate as a Ni chemical vapor deposition (CVD) precursor, which is an alternative to organometal sources. We develop a new method of synthesizing Ni(PF3)4 from Cp2Ni and PF3 with a high yield. Ni(PF3)4 is liquid at room temperature and has a vapor pressure (215 Torr at 30°C) sufficiently high for CVD. CVD using MeCp2Ni or CpAllyNi as a Ni precursor does not produce a Ni film on a Si surface, but CVD using the Ni(PF3)4/He gas system deposits a continuous Ni film on a Si surface at low temperatures below 200°C.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-02-10
著者
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ogura Atsushi
Meiji Univ. Kawasaki Jpn
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Ishikawa Masato
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Ishikawa Masato
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Kada Takeshi
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
Tri Chemical Laboratories Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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Machida Hideaki
TRI Chemical Lab. Inc., 8154-217 Uenohara, Uenohara-machi, Kitatsuru-gun, Yamanashi 409-0112, Japan
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