Ge homoepitaxial growth by metal–organic chemical vapor deposition using t-C

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概要

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• We succeeded in growing Ge homoepitaxial films by metal–organic chemical vapor deposition (MOCVD) using tertiarybutylgermane (t-C<inf>4</inf>H<inf>9</inf>GeH<inf>3</inf>). We synthesized and investigated the characteristics of t-C<inf>4</inf>H<inf>9</inf>GeH<inf>3</inf>. The vapor pressure was sufficiently high in the CVD process. The precursor was sufficiently safe as it did not have a pyrophoric and explosive nature. The Ge homoepitaxial growth was achieved at 360 °C under reduced pressure on an appropriately cleaned Ge(001) substrate.

• Institute of Physicsの論文
• 2014-10-02

著者

• Suda Kohei

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

関連論文

• Ge
• Ge homoepitaxial growth by metal–organic chemical vapor deposition using t-C

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