N–H related defects in GaAsN grown through chemical beam epitaxy
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概要
- 論文の詳細を見る
- Institute of Physicsの論文
- 2014-02-13
著者
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Ohshita Yoshio
Toyota Technological Institute, Nagoya 468-8511, Japan.
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- N–H related defects in GaAsN grown through chemical beam epitaxy