Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

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概要

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• Shallow carrier trap levels in GaAs1-xNx ($0.0010\leq x\leq 0.0038$) were investigated by photoluminescence (PL) and photoreflectance (PR) ranging from 4.2 to 300 K. The band gap energies of the GaAsN were clearly determined in the whole temperature range by the PR fitting analysis. It is clarified by peak decomposing that there were three emission peaks in the near-band-edge PL spectra of GaAsN. One of them was originated from band-to-band transition. The energies of two emission peaks were located at approximately 6 and 17 meV below the band edge. The existence of these peaks is evidence of carrier localization at the near-band-edge. The intensity ratio of the peak at the low energy side to other peaks increases with increasing N composition. This behavior is similar to the degradation of electrical properties.

• 2011-04-25

著者

• Kojima Nobuaki

  Toyota Technological Institute

• Fukuyama Atsuhiko

  Faculty Of Engineering Miyazaki University

• Suzuki Akio

  Faculty Of Science Tohoku University

• Ohshita Yoshio

  Toyota Technological Inst. Nagoya Jpn

• Ohshita Yoshio

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Inagaki Makoto

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Suzuki Hidetoshi

  Interdisciplinary Research Organization, University of Miyazaki, Miyazaki 889-2192, Japan

• Mutaguchi Kazumasa

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Yamagichi Masafumi

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Fukuyama Atsuhiko

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Suzuki Akio

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

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