Identification of Hole Traps in Semi-Insulating GaAs by Means of the Temperature-Dependent Piezoelectric Photo-Thermal Measurements
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概要
- 論文の詳細を見る
Temperature dependence of the piezoelectric photo-thermal (PPT) signal was measured to study the physical parameters of hole traps such as an activation energy, a concentration, and a capture cross section in semi-insulating GaAs. Since the electron and hole optical ionization spectra of $EL$2 have peaks at different photon energies, the wavelength of the probing light was set at 1240 nm for selectively generating free hole carries from $EL$2 centers. Four peaks at 40, 65, 90, and 155 K were observed. From the theoretical analysis based on the rate equations of free holes in the valence band and the relevant trap levels, four kinds of hole traps were characterized. Higher temperature peaks at 90 and 155 K are well identified as non-radiative hole transitions through so-called $HL$12 and $HL$15, respectively.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
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Ikari Tetsuo
Faculty Of Engineering Miyazaki University
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Tada Masaki
Faculty Of Engineering Mie University
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Tada Masaki
Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan
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Fukuyama Atsuhiko
Faculty of Engineering, Miyazaki University, 1-1 Gakuen-kibanadai nishi, Miyazaki 889-2192, Japan
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Fukuyama Atsuhiko
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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