Detection of Photogenerated Carrier Leakage from GaInNAs/GaAs Single Quantum Well by Piezoelectric Photothermal Spectroscopy

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概要

• 論文の詳細を見る

• We investigated the photogenerated carrier leakage from a Ga0.65In0.35N0.005As0.995/GaAs single quantum well (SQW) by piezoelectric photothermal (PPT) spectroscopy. The PPT measurement can detect the heat generated by a nonradiative recombination of photogenerated carriers. Hence, we could clarify the carrier confinement and leakage processes in the quantum well structure by comparing with the results of the PPT and surface photovoltage (SPV) measurements; the SPV measurement can detect a photoinduced change in the surface potential due to both the drift and accumulation of photogenerated carriers. The results showed that the carrier leakage from the SQW plays an important role in the carrier recombination mechanism, despite the high carrier confinement efficiency of SQW compound structures, which are used in laser diodes.

• 2008-09-25

著者

• Ikari Tetsuo

  Faculty Of Engineering Miyazaki University

• Kondow Masahiko

  Department Of Electrical And Computer Engineering University Of California:central Research Laborato

• Fukushima Shin-ichi

  Faculty Of Engineering University Of Miyazaki

• Sakai Kentaro

  Cooperative Research Center, University of Miyazaki, Miyazaki 889-2192, Japan

• Fukushima Shin-ichi

  Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Fukuyama Atsuhiko

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Yokoyama Hirosumi

  Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Ozeki Masashi

  Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

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