Effect of Silicon Doping on the Photoluminescence and Photoreflectance Spectra of Catalyst-Free Molecular Beam Epitaxy--Vapor Liquid Solid Grown GaAs Nanowires on (111)Si Substrate
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概要
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The optical properties of catalyst-free GaAs nanowires (NWs) grown on a (111)Si substrate were investigated by low-temperature photoreflectance (PR) and photoluminescence (PL) techniques. Although the bandgap energy (E_{\text{g}}) of non-doped NWs agreed well with that of liquid-encapsulated Czochralski-grown semi-insulating bulk, a distinctive PL peak caused by a carbon acceptor to an unspecified donor recombination was observed. Because this recombination was also observed in the Si-doped NW sample, we concluded that a new type of donor was introduced during the NW growth processes. Owing to Si doping, the arsenic vacancy-Si acceptor complex was introduced in the NWs, which showed a broad but large PL band of approximately 1.4 eV. Another important finding was that E_{\text{g}} of the Si-doped NW sample was estimated to be 20 meV lower than that of the non-doped NW sample. This implies that the Si-related donor impurity band in NWs was caused by Si doping.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-06-25
著者
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Ikari Tetsuo
Faculty Of Engineering Miyazaki University
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Fukuyama Atsuhiko
Faculty Of Engineering Miyazaki University
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Yamaguchi Masahito
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Mori Takayuki
Faculty of Agriculture, Kyushu University
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Suzuki Akio
Faculty Of Science Tohoku University
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Mori Takayuki
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Paek Ji-Hyun
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya 464-8603, Japan
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Fukuyama Atsuhiko
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Fukuyama Atsuhiko
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Ikari Tetsuo
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Suzuki Akio
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Suzuki Akio
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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