Piezoelectric Photothermal and Photoreflectance Spectra of InxGa1-xN Grown by Radio-Frequency Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Piezoelectric photothermal spectroscopy (PPTS) measurements were carried out on InxGa1-xN ($x=0.01--0.32$) thin films grown by radio-frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side of the spectrum (red shift) with an increase in the indium composition from 0.01 to 0.32. For samples with a lower indium composition, we were able to observe the exciton contribution, and the binding energy was estimated to be 27 meV ($x=0.01$). Since conventional photoreflectance (PR) spectroscopy was unable to observe signals for the samples with a higher indium content ($x=0.13$, 0.2, and 0.32), the usefulness of this PPTS method for samples with phase fluctuation is demonstrated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-30
著者
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Ikari Tetsuo
Faculty Of Engineering Miyazaki University
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Fukuyama Atsuhiko
Faculty Of Engineering Miyazaki University
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Shimohara Takashi
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan
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Kawano Eiki
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan
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Uchibori Yuki
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan
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Komaki Hironori
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan
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Katayama Ryuji
Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba 277-8562, Japan
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Onabe Kentaro
Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5, Kashiwanoha, Kashiwa, Chiba 277-8562, Japan
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Fukuyama Atsuhiko
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Ikari Tetsuo
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan
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