Effect of the Photoquenching of EL2 in GaAs Substrate on the Piezoelectric Photothermal and Surface Photovoltage Spectra of a GaAs Single Quantum Well Confined by GaAs/AlAs Short-Period Superlattices

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概要

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• Two nondestructive techniques, surface photovoltage (SPV) and piezoelectric photothermal (PPT) spectroscopies, were adopted to investigate a GaAs single quantum well (SQW) confined by GaAs/AlAs short-period superlattices (SPSs) fabricated on a semi-insulating (SI) GaAs substrate, whose absorption spectra cannot be obtained easily using conventional techniques. Excitonic absorptions associated with subband transitions in a GaAs SQW and SPSs were clearly observed. We also examined how a SI-GaAs substrate affects the PPT and SPV spectra, particularly the effect of the photoquenching of the deep donor level EL2. It was found that the photoquenching of EL2 causes a significant change in the total built-in potential at the interface between the epitaxial layers and the substrate, and affected the signal intensities observed in the PPT and SPV spectra. The present experimental results have shown that a large amount of carrier leakage occurs from a GaAs SQW and SPSs to the sample surface, even in the presence of Al0.3Ga0.7As buffer layers.

• 2008-01-25

著者

• Ikari Tetsuo

  Faculty Of Engineering Miyazaki University

• Fukuyama Atsuhiko

  Faculty Of Engineering Miyazaki University

• Wang Ping

  Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan

• Akashi Yoshito

  Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Fukuyama Atsuhiko

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

関連論文

• Investigation of EL6 Deep Level in Semi-Insulating GaAs by Means of a Temperature Dependence of Piezoelectric Photothermal Signal
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• Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
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