Piezoelectric Photothermal and Surface Photo-Voltage Studies of Carrier Recombination Mechanism at Interface of Si $ p$–$n$ Junction

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Room-temperature piezoelectric photothermal spectroscopy (PPTS) and surface photo-voltage spectroscopy (SPVS) were carried out on two types of Si $ p$–$n$ junction sample to investigate carrier recombination processes at the interface. It was found that the SPVS peak positions of each spectrum depend on the direction of illumination: a 1.18 eV peak for substrate-side illumination and a 1.25 eV peak for epitaxial-layer-side illumination. We concluded that peak position corresponds to the specific photon energy at which optical penetration length is equal to the distance from the irradiated surface to the $ p$–$n$ junction. On the contrary, the PPTS peak positions depended on the structure of the samples: a 1.18 eV peak for the p/N sample and a 1.25 eV peak for the n/P sample. The PPTS amplitude spectrum of the n/P sample split into two distinctive peaks as a result of frequency being increased. One was a 1.25 eV peak, whose origin is not clear yet. The other was a newly appearing 1.18 eV peak, whose position corresponds to that shown by SPVS.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-07-30