Investigation of Optical Absorption Spectra of GaAs/AlAs Multiple Quantum Wells Fabricated on a GaAs Substrate Using Surface Photovoltage and Piezoelectric Photothermal Techniques
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概要
- 論文の詳細を見る
Two nondestructive techniques of surface photovoltage (SPV) and piezoelectric photothermal (PPT) spectroscopies were adopted to investigate GaAs/AlAs multiple quantum well (MQW) heterostructures fabricated on a GaAs substrate, which is difficult to obtain the absorption spectra using a conventional technique. Excitonic and two-dimensional step-like subband absorptions corresponding to the density of states of MQW were obtained by subtracting the background signal from the substrate signal at room temperature. We also conclude that a difference between SPV and PPT spectra indicates the nonradiative component of the carrier relaxation processes in MQW. We found that the combination of SPV and PPT measurements is a powerful method of investigating the carrier confinement and recombination processes in MQW.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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Ikari Tetsuo
Faculty Of Engineering Miyazaki University
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Wang Ping
Faculty of Engineering, University of Miyazaki, 1-1 Gakuen-Kibanadai-nishi, Miyazaki 889-2192, Japan
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Wang Ping
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Akashi Yoshito
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Fukuyama Atsuhiko
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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Kurayama Shingo
Faculty of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
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