GaN Overgrowth on Thermally Etched Nanoporous GaN Template
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概要
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A thermal-etching process for fabricating nanoporous GaN templates in a metalorganic vapor phase epitaxy (MOVPE) reactor was proposed. Such nanoporous templates exhibited nearly complete strain relaxation and considerably increased photoluminescence (PL) intensity. The threading dislocation density (TDD) after overgrowth was reduced from 3 \times 10^{9} to 4 \times 10^{8} cm<sup>-2</sup>for the template with poor quality, whereas little improvement was observed for the high-quality template (TDD, 4 \times 10^{8} cm<sup>-2</sup>). Multiple quantum wells (MQWs) grown on a nanoporous template fabricated from the high-quality GaN template were used to assess the effect on LED performance. The PL intensity of the sample with a nanoporous structure showed a twofold increase in PL intensity compared with the control sample.
- 2013-08-25
著者
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Amano Hiroshi
Department of Cardiology and Pneumology, Dokkyo University School of Medicine
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HONDA Yoshio
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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YAMAGUCHI Masahito
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University
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Miao Cao
Department of Electrical Engineering and Computer Science and Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Miao Cao
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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Honda Yoshio
Department of Electrical Engineering and Computer Science, Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan
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