Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-07-15

著者

• Miyake Hideto

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• Hiramatsu Kazumasa

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University

• SONE HIROKI

  Department of Geophysics, School of Earth Sciences, Stanford University

• Sone Hiroki

  Department Of Electronics School Of Engineering Nagoya University

• Sone Hiroki

  Department Of Chemistry Faculty Of Science Nagoya University

• KAWAGUCHI Yasutoshi

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• YAMAGUCHI Masahito

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• SAWAKI Nobuhiko

  Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya

• MATSUSHIMA Hidetada

  Department of Electronics, School of Engineering, Nagoya University

• Matsushima Hidetada

  Department Of Electronics School Of Engineering Nagoya University

• Yamaguchi M

  Toyota Technological Inst. Nagoya Jpn

• Sawaki N

  Nagoya Univ. Nagoya Jpn

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Sawaki Nobuhiko

  Department Of Electronics Faculty Of Engineering Nagoya University

• NAMBU Shingo

  Department of Electronics, School of Engineering, Nagoya University

• SHIBATA Takumi

  Department of Electronics, School of Engineering, Nagoya University

• Nambu Shingo

  Department Of Electronics School Of Engineering Nagoya University

• Yamaguchi Masahito

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hiramatsu Kazumasa

  Division Of Electrical And Electronic Engineering Graduate School Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu K

  Ntt Corp. Tsukuba‐shi Jpn

• Sugiura T

  Department Of Electrical Engineering Toyota College Of Technology

• Sawaki Nobuhiko

  Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan

• YAMAGUCHI Masahito

  Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University

• SAWAKI Nobuhiko

  Department of Electronics, Nagoya University

関連論文

• 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
• 高Al組成AlGaNの表面特性と深い電子準位(窒化物及び混晶半導体デバイス)
• 次世代固体照明の開発と医療・環境応用に関する研究
• Selective Area Growth of III-Nitride and Their Application for Emitting Devices
• AlN/sapphire上のAlGaNのMOVPE成長と発光特性(窒化物及び混晶半導体デバイス)
• AlN/sapphire上のAlGaNのMOVPE成長と電子線励起による深紫外発光(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• AlGaNのMOVPE成長における基板の反り制御(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)
• 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
• 周期溝加工AlN/サファイア上への減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• 高Al組成AlGaNの表面特性と深い電子準位(窒化物及び混晶半導体デバイス)
• AlN/sapphire上のAlGaNのMOVPE成長と発光特性(窒化物及び混晶半導体デバイス)
• 高Al組成AlGaNの表面特性と深い電子準位(窒化物及び混晶半導体デバイス)
• AlN/sapphire上のAlGaNのMOVPE成長と発光特性(窒化物及び混晶半導体デバイス)
• MOVPE法によるr面サファイア上へのa面GaN成長(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• AlN/sapphire上のAlGaNのMOVPE成長と電子線励起による深紫外発光(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• MOVPE法によるr面サファイア上へのa面GaN成長(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• AlN/sapphire上のAlGaNのMOVPE成長と電子線励起による深紫外発光(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• MOVPE法によるr面サファイア上へのa面GaN成長(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• 次世代固体照明の開発と医療・環境応用に関する研究
• Low total and inorganic carbon contents within the Taiwan Chelungpu fault system
• 高Alモル分率AlGaNへのSiドーピングによる影響(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
• 研磨AlN基板を用いたAlGaNの成長と評価(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
• 高Alモル分率AlGaNへのSiドーピングによる影響(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
• 研磨AlN基板を用いたAlGaNの成長と評価(結晶成長・特性評価, 窒化物半導体光・電子デバイス・材料, 及び関連技術, 及び一般(窒化物半導体国際ワークショップ))
• Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
• Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
• Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
• 金属EDTA錯体を用いたGaN系青色発光材料の合成(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• 金属EDTA錯体を用いたGaN系青色発光材料の合成(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• 金属EDTA錯体を用いたGaN系青色発光材料の合成(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• 金属EDTA錯体を用いたGaN系青色発光材料の合成
• Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
• 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN(窒化物及び混晶半導体デバイス)
• SiCを基板に用いた減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
• 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN(窒化物及び混晶半導体デバイス)
• SiCを基板に用いた減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
• 減圧HVPE法による周期溝加工AlN/サファイア上へのELO-AlN(窒化物及び混晶半導体デバイス)
• SiCを基板に用いた減圧HVPE法によるAlN成長(窒化物及び混晶半導体デバイス)
• Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
• Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
• Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
• 周期溝加工基板上への減圧HVPE法によるAlN成長と評価(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)
• 周期溝加工基板上への減圧HVPE法によるAlN成長と評価(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)
• Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
• Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
• Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
• On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
• Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
• Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
• Photoluminescence Decay Properties of Indium Doped ZnS
• VPE Growth of ZnS Incorporating Indium on GaP
• Synthesis of the Aglycon of Aurisides A and B, Cytotoxic Macrolide Glycosides of Marine Origin
• Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
• Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
• Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
• Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
• Theory of Tunneling into Impurity Band
• Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
• Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
• Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
• Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
• Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
• Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
• Wannier-Stark Localization in Superlattices
• Raman Scattering in ZnS_xSe_ Alloys
• Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
• Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
• Variation of Surface Potentials of Si-Doped Al_xGa_N (O
• Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
• Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
• Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
• Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
• Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
• Field Emission from GaN Self-Organized Nanotips
• Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
• Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
• Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
• In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Electrical Transport Properties of p-GaN
• Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
• Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
• LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
• Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
• X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
• Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
• Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
• Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
• Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
• Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
• Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy

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