Theory of Tunneling into Impurity Band
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概要
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The theory of tunneling into an impurity band across a junction is developed by using the self-consistent Green's function in a ramdom array of impurity potential. If a short range potential is assumed for the impurity potential, the tunneling current density is expressed in terms of the proper self-energy Σ and the first and second derivatives of the current with respect to applied voltage are obtained. The results are examined numerically and it is shown that d^2J/dV^2-V curve should have a structure around the energy gap between the impurity band and the main band. In the impurity band, the dJ/dV-V curve reflects the influence of Im Σ, while in the main band region it reflects the parabolic behaviour of the density of states because of the smaller contribution of Im Σ.
- 社団法人日本物理学会の論文
- 1973-09-05
著者
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SAWAKI Nobuhiko
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
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ARIZUMI Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Nagoya University
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Arizumi Tetsuya
Department Of Electronic Engineering Faculty Of Engineering Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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