UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
The electronic surface properties of Al_xGa_<1-x>N have been studied with ultraviolet photoemission spectroscopy (UPS). Samples were grown by metalorganic vapor phase epitaxy and prepared with multiple cycles of nitrogen ion sputtering and annealing to obtain clean surfaces. The energy position of the Valence band maxima of the GaN surface was at 3.0 eV below the Fermi level and the upward band bending was 0.35 eV. The widths of the UPS energy distribution curves of Al_xGa_<1-x>N Yielded the ionization energy, and the electron affinity was determined to be 3.6-2.9 eV for x=0-0.6. It was found that the electron affinity of Al_xGa_<1-x>N was positive and reduced with increasing the AlN molar fraction.
- 2000-08-01
著者
-
Mori Tomohiko
Toyota Central R&d Laboratories Inc.
-
Taga Yasunori
Toyota Central R&d Laboratories Inc.
-
Taga Yasunori
Toyota Central R & D Laboratories Inc.
-
OHWAKI Takeshi
Toyota Central R & D Laboratories Inc.
-
Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
-
Ohwaki Takeshi
Toyota Central R&d Laboratories Inc.
-
Kozawa Takahiro
Toyota Central R&d Laboratories Inc.
-
Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
関連論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
- Direct Formation of Arrays of Prolate Ag Nanoparticles by Dynamic Oblique Deposition
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Comparative Study of C-V and Transconductance of a Si δ-Doped GaAs FET Structure
- Picosecond Photoluminescence Study of Relaxation Phenomena of Hot Electrons in a Quasi-One-Dimensional Structure
- On the Electron Mobility in Quasi-One-Dimensional Structures Fabricated by Holographic Lithography and Wet Chemical Etching
- Edge and Self-Activated High Band Emission of ZnS_xSe_ Single Crystal Epitaxial Layers
- Thermodynamical Analyses and Luminescence Properties of Vapor-Grown ZnS_xSe_
- Photoluminescence Decay Properties of Indium Doped ZnS
- VPE Growth of ZnS Incorporating Indium on GaP
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Photocatalytic Degradation of Formaldehyde and Toluene Mixtures in Air with a Nitrogen-doped TiO_2 Photocatalyst
- Band-Gap Narrowing of Titanium Dioxide by Nitrogen Doping : Optical Properties of Condensed Matter
- Effect of AlN Buffer Layer on AlGaN/α-Al_2O_3 Heteroepitaxial Growth by Metalorganic Vapor Phase Epitaxy : Condensed Matter
- Theory of Tunneling into Impurity Band
- Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode
- Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire
- Deep-Level Characterization of Tris(8-Hydroxyquinoline) Aluminum with and without Quinacridone Doping
- Photoemission Spectroscopy of the Interface between Indium-Tin-Oxide and Copper Phthalocyanine for Transparent Organic Light-Emitting Devices(Optics and Quantum Electronics)
- Chemical Structure of Aluminum/8-Hydroxyquinoline Aluminum Interface
- Magnetic Properties of Granular Fe-Cr-O and Fe-X-Cr-O (X=Cu, Rh) Films
- Soft Magnetic Properties of Co-Cr-O Granular Films
- Improvement of Soft Magnetic Properties of Co-Cr-O Film by Additional X(= Rh, Ir, Ag, or Au)
- Interfacial Stability Between Ta-Sn-O Films and Indium Tin Oxide Electrodes
- Raman Scattering in ZnS_xSe_ Alloys
- Characterization of ZnS_xSe1_x/(100)Gap Heterointerface by Raman Scattering : Semiconductors and Semiconductor Devices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire
- Effect of Residual Water on Giant Magnetoresistance in Co/Cu Superlattices
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Anomalous Etching Phenomenon of RF-Sputtered SiO_2 Films
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- Monolithic Pyroelectric Infrared Image Sensor Using PVDF Thin Film (特集:特殊イメ-ジング技術)
- Utilization of an Aromatic [4.4.4]Propellane as Thermally Stable Hole-Transport Materials in OLEDs
- Spirocycle-Incorporated Triphenylamine Derivatives as an Advanced Organic Electroluminescent Material
- Secondary Ion Emission from Si Subjected to Oxygen Ion Bombardment
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Application of N, N, N', N'-Tetrasubstituted 1, 3-Bis(4-aminophenyl)azulenes to Hole-injecting Materials for Durable Organic EL Devices without Color Fade
- Time-of-Flight Scattering and Recoiling Spectrometry Study of Plasma-Cleaned Silicon Surface ( Plasma Processing)
- Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
- Tensile Testing of Polycrystalline Silicon Thin Films Using Electrostatic Force Grip
- UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy
- Raman Intensity of Phonon Modes in InGaAsP Quaternary Alloys Grown on (100) InP in the Region of Immiscibility
- Raman Scattering Study of InGaAsP Quaternary Alloys Grown on InP in the Immiscible Region
- Integrated Sculptured Thin Films : Surfaces, Interfaces, and Films
- Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
- Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
- Theory of Plasma Spreading Velocity in a Thyristor
- Tunneling Spectroscopic Study of the Impurity Band of (000) Valley of Germanium
- Tunneling through Band Tail States
- Uniaxial Stress Effect on Subsidiary Band Minima of GaSb from Zero Bias Conductance Anomaly
- Uniaxial Stress Effect on (000) and (100) Conduction-Band Minima of Germanium
- Plasma Spreading and Turn-On Delay in a Power Thyristor
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
- Morphological Stability of TiO_2 Thin Films With Isolated Columns : Surfaces, Interfaces, and Films
- Measurement of Minority-Carrier Drift Velocity in Quantum Well Structures by Phololuminescence Intensity Correlation Method
- Preferred Orientation in Ti Films Sputter-Deposited om Si0_2 Glass:The Role of Water Chemisorption on the Substrate
- Electron Mobility and Drag Effect in p-Type Silicon
- Measurement of Electron Mobility in p-Si by Time-of-Flight Technique
- Measurement of Minority-Carrier Diffusion Coefficient in Silicon by AC Photo-Current Method
- Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
- Pyroelectric Property of Pb_5Ge_3O_ Thin Films Prepared by Laser Ablation
- Magnetic Scattering in Germanium Tunnel Diode
- Crystal Orientation of GaN Nanostructures Grown on AlO and Si(111) with a Zr Buffer Layer (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Characterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN
- Ultraviolet Light Emitting Diode with High Quality Epilayer Grown by Hydride Vapor Phase Epitaxy (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Development of the Hybrid Conjugated Polymer Solar Cell Based on GaN Quantum Dots
- Nonphosphor White Light Emitting Diodes by Mixed-Source Hydride Vapor Phase Epitaxy
- A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy
- Formation Mechanism of AlGaAs/GaAs Stripe Structure Made of ($11n$)A Facets in Selective Molecular-Beam Epitaxy
- Confinement and Transfer of a Two-Dimensional Wave Packet under Crossed Electric and Magnetic Fields
- Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
- Gas Sensors Based on Organic Field-Effect Transistors: Role of Chemically Modified Dielectric Layers
- Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
- Carbon Incorporation on ($1\bar{1}01$) Facet of AlGaN in Metal Organic Vapor Phase Epitaxy
- Enhancement of Electron Mobility in Quasi-One-Dimensional Structure
- Deep-Level Characterization of Tris(8-hydroxyquinoline) Aluminum with and without Quinacridone Doping
- Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal–Semiconductor–Metal Photodetector on Sapphire
- Direct Formation of Arrays of Prolate Ag Nanoparticles by Dynamic Oblique Deposition
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
- Growth of GaN on Metallic Compound Graphite Substrate Using Hydride Vapor Phase Epitaxy
- Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire