Deep-Level Characterization of Tris(8-hydroxyquinoline) Aluminum with and without Quinacridone Doping
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概要
- 論文の詳細を見る
We have investigated band gap states in tris(8-hydroxyquinoline) aluminum (Alq3) with and without quinacridone (Qd) doping on fabricated indium–tin-oxide (ITO)/Alq3(:Qd)/LiF/Al devices by a deep-level optical spectroscopy (DLOS) technique. A nondoped Alq3 sample shows a discrete trap level located at ${\sim}1.39$ eV below the lowest unoccupied molecular orbital band in addition to near-band-edge transitions at 2.2–3.6 eV. This pronounced 1.39 eV level is attributable to the intrinsic nature of Alq3 and can be activated as an efficient generation-recombination (GR) center that may affect photophysical properties. On the other hand, a Qd-doped Alq3 sample exhibits a new deep level at ${\sim}2.40$ eV with increasing double-carrier injection rate, corresponding to the highest occupied molecular orbital band of Qd. Simultaneously, this GR center is subject to charge up positively owing to the presence of holes injected into the Qd doping level of the Qd-doped Alq3 sample.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Noda Koji
Toyota Central Research And Development Laboratories Inc.
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Morikawa Takeshi
Toyota Central R & D Laboratories Inc.
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OHWAKI Takeshi
Toyota Central R & D Laboratories Inc.
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Nakano Yoshitaka
TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Ohwaki Takeshi
TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Fujikawa Hisayoshi
TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Fujikawa Hisayoshi
TOYOTA Central R&D Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
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Noda Koji
TOYOTA Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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