Kozawa Takahiro | Toyota Central R&d Laboratories Inc.
スポンサーリンク
概要
関連著者
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Kozawa Takahiro
Toyota Central R&d Laboratories Inc.
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OHSAWA Jun
Toyota Technological Institute
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Itoh Hiroshi
Toyota Central R&d Labs. Inc.
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Kozawa Takahiro
Toyota Central R&d Labs. Inc.
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Ishiguro Osamu
Toyota Central R&d Laboratories Inc.
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ITOH Hiroshi
Toyota Central R&D Labs., Inc.
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ISHIGURO Osamu
Toyota Central R&D Laboratories, Inc.
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Ishiguro Osamu
Toyota Central R&d Labs. Inc.
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Fujishima Osamu
Toyota Central R&d Labs. Inc.
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Kozawa Takahiro
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Mori Tomohiko
Toyota Central R&d Laboratories Inc.
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Taga Yasunori
Toyota Central R&d Laboratories Inc.
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Taga Yasunori
Toyota Central R & D Laboratories Inc.
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OHWAKI Takeshi
Toyota Central R & D Laboratories Inc.
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Ohwaki Takeshi
Toyota Central R&d Laboratories Inc.
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MIURA Hideki
Toyota Technological Institute
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FUJISHIMA Osamu
Toyota Central R&D Labs., Inc.
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HAYASHI Hiroyuki
Toyota Technological Institute
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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Miura Hideki
Toyota Technological Institute, 2-12 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
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Fujishima Osamu
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Ishiguro Osamu
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Itoh Hiroshi
Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
著作論文
- Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode
- Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire
- Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire
- UV Photoemission Study of AlGaN Grown by Metalorganic Vapor Phase Epitaxy
- Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal–Semiconductor–Metal Photodetector on Sapphire
- Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire