OHSAWA Jun | Toyota Technological Institute

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概要

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著作論文

A GaAs Micro Solar Cell with Output Voltage over 20 V
Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths
Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode
Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire
Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal-Semiconductor-Metal Photodetector on Sapphire
Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire
Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
Formation of β-FeSi_2 with Electron Beam Evaporation
Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs
Fast Micro-Photodetector for Shorter Wavelengths on Silicon-on-Insulator Structures : Optics and Quantum Electronics
Contactless Measurement of Young’s Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal–Semiconductor–Metal Photodetector on Sapphire
Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs
Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire

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