Fast Micro-Photodetector for Shorter Wavelengths on Silicon-on-Insulator Structures : Optics and Quantum Electronics
スポンサーリンク
概要
- 論文の詳細を見る
The thin active layer of a silicon-on-insulator (SOI) was utilized for the fabrication of small-size metal-semiconductor-metal (MSM) photodetectors for blue or ultraviolet light. This is possible because silicon has strong optical absorption for the shorter wavelengths. Interdigitated electrodes in the detecting area of about 50 μm square showed a low dark current of less than 1 nA and a responsivity of 0.3 A/W at 488 nm wavelength, both at a bias of 2.5 V. The response to picosecond light pulses at 395 nm exhibited a full-width at half-maximum (FWHM) of about 100 ps in the bias range of 1-10 V. Samarium was employed for the Schottky contacts on the active layer of p-type silicon to suppress the dark current.
- 社団法人応用物理学会の論文
- 2002-06-15
著者
-
Misaki Takashi
Toyota Technological Institute
-
OHSAWA Jun
Toyota Technological Institute
-
IBARAKI Toshiaki
Toyota Technological Institute
関連論文
- A GaAs Micro Solar Cell with Output Voltage over 20 V
- Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths
- Selective Detection of Blue and Ultraviolet Light by An InGaN/GaN Schottky Barrier Photodiode
- Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire
- Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal-Semiconductor-Metal Photodetector on Sapphire
- Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire
- Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
- Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures : Instrumentation, Measurement, and Fabrication Technology
- Formation of β-FeSi_2 with Electron Beam Evaporation
- Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs
- Fast Micro-Photodetector for Shorter Wavelengths on Silicon-on-Insulator Structures : Optics and Quantum Electronics
- Contactless Measurement of Young’s Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators
- Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal–Semiconductor–Metal Photodetector on Sapphire
- Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs
- Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire