Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs
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概要
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A simple diffusion process at low temperatures of 500-550°C can increase the resistivity of GaAs by one order of magnitude ; deep acceptors of iron on the order of 10^<14>cm^<-3> were introduced into encapsulated Czochralski(LEC)-grown GaAs wafers from a spin-on source to obtain higher resistivity in the range of 10^8Ω・cm. Control of the Fermi level onto the middle of the energy gap was accomplished by compensating deep donors of electron level No.2(EL2)by the acceptors located at E_t-E_v=0.46eV. A calculation based on carrier-compensation concurs with the trend in the resistivity variation experimentally obtained by iron-diffusion in the temperature range of 450-600°C.
- 社団法人応用物理学会の論文
- 2000-01-15
著者
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Misaki T
Toyota Technological Inst. Nagoya Jpn
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Misaki Takashi
Toyota Technological Institute
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OHSAWA Jun
Toyota Technological Institute
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Ozaki Yasutaka
Toyota Technological Institute
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