Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
Three-dimensional facet structure of GaN has been fabricated on dot-patterned GaN (0001)/sapphire substrates using SiO_2 masks via selective epitaxial growth by metalorganic vapor phase epitaxy. The dot patterns are hexagons with width of 5 μm and spacing of 10 μm. The facet structure comprises a hexagonal pyramid covered with six {11^^-01} facets. A stable and self-limited (0001) facet appears on the top, depending on growth conditions. The area of the (0001) facet increases with increasing growth temperature or with decreasing flow rate of trimethylgallium. The (0001) facet formation is determined by the diffusion length of a Ga atom on the (0001) surface.
- 社団法人応用物理学会の論文
- 1995-09-15
著者
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Sawaki Nobuhiko
Department Of Electronics Faculty Of Engineering Nagoya University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electronics Nagoya University
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KITAMURA Shota
Department of Electronics, Nagoya University
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Kitamura Shota
Department Of Electronics Nagoya University
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Sawaki Nobuhiko
Department of Electrical and Electronic Engineering, Aichi Institute of Technology, Toyota, Aichi 470-0392, Japan
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