Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
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概要
- 論文の詳細を見る
High-crystalline-quality epitaxial films of wurtzite AlN were grown by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE). The lattice strain of the films was analyzed by high-resolution X-ray diffraction and the E2 (high)-phonon frequency was observed by Raman scattering. Data analysis for wide ranges of lattice strains and phonon-peak shifts yielded a precise biaxial stress coefficient of this phonon mode, $-4.04\pm 0.3$ cm-1/GPa. Furthermore, the deformation potential constant was accurately determined from the biaxial stress coefficient.
- 2011-03-25
著者
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Harima Hiroshi
Department Of Applied Physics Osaha University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Miyagawa Reina
Department Of Electrical And Electronic Engineering Mie University
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Yang Shibo
Department Of Electrical And Electronic Engineering Mie University
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Miyagawa Reina
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
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Hiramatsu Kazumasa
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
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Harima Hiroshi
Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585, Japan
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Yang Shibo
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Mie University, Tsu 514-8507, Japan
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