Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
-
Sugiyama Koichi
Department of Cardiovascular Medicine, Graduate School of Medical Sciences, Kumamoto University
-
Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Miyake Hideto
Department Of Electrical And Electronic Engineering Mie University
関連論文
- Selective Area Growth of III-Nitride and Their Application for Emitting Devices
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- PJ-671 Abdominal Obesity is a Significant Determinant of Endothelial Dysfunction in High Risk Patients with or without Metabolic Syndrome(Diabetes / Obesity / Metabolic syndrome(13)(H),Poster Session(Japanese),The 72nd Annual Scientific Meeting of the Jap
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Temperature Dependence of X_1-X_3 Splitting Energy in Lightly Doped GaP
- Spatial Distributions of Damage Introduced into GaP by Collimated MeV-Electron Beams : Lateral Spreads of Damage Compared with Electron Spreads
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
- Field Emission from GaN Self-Organized Nanotips
- Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
- Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
- In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
- X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Phase Diagram of the CuGaS_2-In Pseudobinary System
- Growth of CuGaS_2 Single Crystals by Traveling Heater Method
- Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
- Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
- Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
- Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
- Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
- Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
- Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
- Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
- Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
- Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
- Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
- Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
- Current status of the treatment of microscopic polyangiitis and granulomatosis with polyangiitis in Japan