Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
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概要
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An ultraviolet (UV)-light-source tube using a Si-doped AlGaN film as a target of electron beam excitation was fabricated. The Si-doped AlGaN was grown on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE), and its optical properties were evaluated by excitation with a 10 kV electron beam (EB). Emission intensity was significantly improved by Si doping and optimization of the growth conditions. 247 nm deep-UV light was observed from the tube, and the lifetime of the light tube until 50% emission output of the initial strength was approximately 2000 h at an EB acceleration voltage of 10 kV with a current of 100 μA.
- 2011-04-25
著者
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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YOSHIDA Harumasa
Hamamatsu Photonics K. K.
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Takaoka Hidetsugu
Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
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Okada Tomoyuki
Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
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Miyake Hideto
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Shimahara Yuki
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Fukuyo Fumitsugu
Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
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