YOSHIDA Harumasa | Hamamatsu Photonics K. K.
スポンサーリンク
概要
関連著者
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YOSHIDA Harumasa
Hamamatsu Photonics K. K.
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Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
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TORII Kousuke
Hamamatsu Photonics K. K.
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NAGAKURA Takehito
Hamamatsu Photonics K. K.
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NAITO Hideyuki
Hamamatsu Photonics K. K.
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AOKI Yuta
Hamamatsu Photonics K. K.
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HIGUCHI Akira
Hamamatsu Photonics K. K.
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MORITA Takenori
Hamamatsu Photonics K. K.
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MAEDA Junya
Hamamatsu Photonics K. K.
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MIYAJIMA Hirofumi
Hamamatsu Photonics K. K.
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Takaoka Hidetsugu
Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
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Okada Tomoyuki
Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
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MIYAMOTO Masahiro
Hamamatsu Photonics K. K.
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Shimahara Yuki
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Fukuyo Fumitsugu
Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan
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MIYAMOTO Masahiro
Hamamatsu Photonics K.K.
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KOBAYASHI Yuji
Hamamatsu Photonics K.K., Central Research Laboratory
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Miyake Hideto
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Ochiai Shunsuke
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Torii Kousuke
Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan
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Fukuyo Fumitsugu
Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan
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Kuwabara Masakazu
Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan
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Yamashita Yoji
Hamamatsu Photonics K.K., Hamamatsu 434-8601, Japan
著作論文
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Short-Pulse Operation of a High-Power-Density Proton-Implanted Vertical-Cavity Surface-Emitting Laser Array
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
- Short-Pulse Operation of a High-Power-Density Proton-Implanted Vertical-Cavity Surface-Emitting Laser Array
- Laser Operation of Nitride Laser Diodes with GaN Well Layer in 340 nm Band