Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

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概要

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• In this paper we report the growth of Si-doped AlGaN on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) with an <i>in situ</i> monitoring system to fabricate a high-quality film with controlled thickness. The AlN mole fraction in AlGaN can be controlled by adjusting the growth temperature. We also discuss the quality and growth mechanism of AlGaN on AlN. GaN and AlGaN with an AlN mole fraction of 0.28 were free from stress because of the occurrence of three-dimensional (3D) growth. The lattice constant $a$ of AlGaN with an AlN mole fraction of 0.40 was larger than that at an AlN mole fraction of 0.28 despite the two-dimensional (2D) growth mode. This indicates that the lattice mismatch between AlGaN and the underlying AlN adversely affects the crystal quality. AlGaN with an AlN mole fraction of over 0.60 was coherently grown on AlN owing to the fact that the AlN/sapphire template used in this work was subjected to compression. For this reason, in the samples with an AlN mole fraction of over 0.6, the crystal quality was high because of the coherent growth on the underlying AlN. Moreover, Si doping was performed for AlGaN. The carrier concentration increased linearly up to a Si concentration of $2 \times 10^{18}$ cm-3, indicating that the activation rate was approximately 1.

• 2011-09-25

著者

• Miyake Hideto

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• Hiramatsu Kazumasa

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University

• YOSHIDA Harumasa

  Hamamatsu Photonics K. K.

• Takaoka Hidetsugu

  Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan

• Okada Tomoyuki

  Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan

• Shimahara Yuki

  Department of Electrical and Electronic Engineering, Mie University, Tsu 514-8507, Japan

• Fukuyo Fumitsugu

  Hamamatsu Photonics K.K., Iwata, Shizuoka 438-0193, Japan

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