Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
スポンサーリンク
概要
- 論文の詳細を見る
- 2012-02-25
著者
-
Mitsuhara Masatoshi
Department Of Engineering Sciences For Electronics And Materials Kyushu University
-
Kuwano Noriyuki
Department Of Applied Science For Electronics And Materials Kyushu University
-
Kuwano Noriyuki
Department Of Applied Science For Electronics And Materials Interdisciplinary Graduate School Of Eng
-
Miyake Hideto
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Hiramatsu Kazumasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Mie University
-
Miyagawa Reina
Department Of Electrical And Electronic Engineering Mie University
-
YANG Shibo
Department of Electrical and Electronic Engineering, Mie University
-
KUWAHARA Takaaki
Department of Applied Science for Electronics and Materials, Kyushu University
-
Yang Shibo
Department Of Electrical And Electronic Engineering Mie University
-
Kuwahara Takaaki
Department Of Applied Science For Electronics And Materials Kyushu University
関連論文
- Selective Area Growth of III-Nitride and Their Application for Emitting Devices
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Microstructure Analysis of Sintered Nd-Fe-B Magnets Improved by Tb-Vapor Sorption
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO_2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
- Enhanced Interlayer Coupling and Magnetoresistance Ratio in Fe_3Si/FeSi_2 Superlattices
- HRTEM image contrast and atomistic microstructures of long-period ordered Al-rich TiAl alloys
- Crystal Structures of H-Pd_5Ce and Pd_5La and Their Electrical Resistivities at Low temperatures
- Three-Dimensional Observation of Dislocations by Electron Tomography in a Silicon Crystal
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiseibility
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors)
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
- Relaxation Process of the Thermal Strain in the GaN/α-Al_2O_3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
- Metalorganie Vapor Phase Epitaxial Growth and Properties of GaN/Al_Ga_N Layered Structures
- Cathodoluminescence Properties of Undoped and Zn-Doped Al_xGa_N Grown by Melalorganic Vapor Phase Epitaxy
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Variation of Surface Potentials of Si-Doped Al_xGa_N (O
- Electron Microscopic Observation of Short Range Order in α Phase of Pd-Ce and Evidence for Pd_7Ce
- Investigations on the Microstructures of Some Ordering Alloys
- Structure of Short Range Order in αCu-18.6 at% Al
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Phase Relations in the CuGa_xIn_Se_2-In Pseudobinary System
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase Epitaxy
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN
- Formation Mechanism of Antiphase Boundary Structure in Molecular Beam Epitaxy Grown InGaAs/(110) InP
- Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films
- Electron Microscopic Observation of Heterointerface in Ga_xInAs_yP_/InP Grown by Liquid
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors
- Field Emission from GaN Self-Organized Nanotips
- Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors
- Formation of GaN Self-Organized Nanotips by Reactive Ion Etching : Semiconductors
- In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy : Semiconductors
- Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
- Electrical Transport Properties of p-GaN
- Schottky Barrier on n-Type Al_Ga_N Grown by Organometalic Vapor Phase Epitaxy
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- LPE Growth and Surface Morphology of In_xGa_As_yP_ (y≤0.01) on (100) GaAs
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets
- X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Gradual tilting of crystallographic orientation and configuration of dislocations in GaN selectively grown by vapour phase epitaxy methods
- Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
- Growth of Single Crystal Al_xGa_N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
- Lattice-Mismatch-Induced Deep Level in In_xGa_AS_yP_ (0≦y≦0.41) Grown on (100) GaAs
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_As_yP_(y
- Interpretation of High Resolution Transmission Electron Microscope Images of Short Range Ordered Ni_4Mo
- Quantitative Analysis of Ordered Structure in Multinary Alloys by the IKL-ALCHEMI Method and Its Application to Ordering Kinetics
- Phase Diagram of the CuGaS_2-In Pseudobinary System
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy
- Growth of CuGaS_2 Single Crystals by Traveling Heater Method
- Growth of Bulk CuGaS_2 Single Crystals Using Solution Bridgman Method
- Single Crystal Growth of Cu-III-VI_2 Semiconductors by THM
- A New One-Dimensional Long Period Superstructure in Pd_5Ce
- Analysis of Disorder Scattering in Ga_In_As Using Gaussian Potential
- Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy
- Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy
- In-situ TEM Observation of Phase Transformation Processes in Cu_3Pt with a Long-Period Superstructure
- Erratum: “Near-Edge X-ray Absorption Fine-Structure, X-ray Photoemission, and Fourier Transform Infrared Spectroscopies of Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films”
- Near-Edge X-ray Absorption Fine-Structure, X-ray Photoemission, and Fourier Transform Infrared Spectroscopies of Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films
- Ordered Structures and Phase States in Epitaxial Layers of III-V Semiconductor Alloys
- Photoluminescence due to Inelastic Biexciton Scattering from an Al.Ga.N Ternary Alloy Epitaxial Layer at Room Temperature
- Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources
- Photoluminescence due to Inelastic Biexciton Scattering from an Al_Ga_N Ternary Alloy Epitaxial Layer at Room Temperature
- Growth of Cu2ZnSnS4 Single Crystal by Traveling Heater Method
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film
- Epitaxy in Fe3Si/FeSi2 Superlattices Prepared by Facing Target Direct-Current Sputtering at Room Tempertaure
- Low-Temperature Growth of Nanocrystalline Diamond by Reactive Pulsed Laser Deposition under a Hydrogen Atmosphere
- Metalorganic Vapor Phase Epitaxy of Thick InGaN on Sapphire Substrate
- Spectral Absorption Properties of Ultrananocrystalline Diamond/Amorphous Carbon Composite Thin Films Prepared by Pulsed Laser Deposition
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer
- Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy
- Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
- Selective Area Growth of Semipolar (20\bar{2}1) and (20\bar{2}\bar{1}) GaN Substrates by Metalorganic Vapor Phase Epitaxy
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy
- Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates
- Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Higher order Laue zone patterns in convergent beam electron diffraction and determinations of local lattice parameters in .ALPHA.- and .ALPHA.2-phases of a Cu-20at%Al alloy.
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer