Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
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概要
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We have succeeded in the growth of a high-quality semipolar \{11\bar{2}2\} GaN layer on an r-plane patterned sapphire substrate (r-PSS). In this study, we fabricated light-emitting diodes (LEDs) using relaxed thick InGaN layers with various In compositions. There were significant changes in polarization properties, indicating lattice mismatch reduction due to the use of a relaxed thick InGaN layer. Electroluminescence (EL) intensity was improved by using a relaxed thick InGaN layer with low In composition. In particular, the EL intensity improved approximately twofold compared with that in the case of LEDs without relaxed thick InGaN layers at an injection current of 200 mA.
- 2013-08-25
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Kuwano Noriyuki
Department Of Applied Science For Electronics And Materials Interdisciplinary Graduate School Of Eng
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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YAMANE Keisuke
Graduate School of Science and Engineering, Yamaguchi University
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UCHIDA Katsumi
Graduate School of Science and Engineering, Yamaguchi University
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Kuwano Noriyuki
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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MIYOSHI Seita
Graduate School of Science and Engineering, Yamaguchi University
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Yamane Keisuke
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Uchida Katsumi
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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