Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
スポンサーリンク
概要
- 論文の詳細を見る
We grew a GaN layer on a -6.5°-off-angle n-plane patterned sapphire substrate (PSS) by selective-area growth from a sapphire sidewall. A uniform GaN layer with alternately arranged m- and \{10\bar{1}1\} facets on the surface was obtained on the PSS. Multiple quantum wells (MQWs) on the GaN template showed multicolor emission owing to their different structures. The peak wavelength of the MQWs on the \{10\bar{1}1\} facet of 440 nm was longer than that in the case of 405 nm on the m-facet.
- 2013-01-25
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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Okada Narihito
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Takami Masaki
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Yamada Yoichi
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Tadatomo Kazuyuki
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
関連論文
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- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
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