Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O
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概要
- 論文の詳細を見る
We investigated the performance of InGaN/GaN light-emitting diodes (LEDs) fabricated using NH3 with intentionally added H2O. The H2O concentrations in NH3 were assessed quantitatively using an optical analyzing system. The oxygen concentration in the active layer was measured by secondary ion mass spectrometry and observed to increase with increasing H2O concentration. In addition, the oxygen was predominantly incorporated in InGaN well layers rather than in GaN barrier layers. The performance of LEDs markedly deteriorated with increasing H2O concentration. It was found by current–voltage measurement that oxygen in the multi quantum well layer increases leakage current.
- 2009-06-25
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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Kobayashi Yoshihiko
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ishida Fumio
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mitsui Yasutomo
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mangyo Hirotaka
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ono Hiroyuki
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ikenaga Kazutada
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Yano Yoshiki
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Matsumoto Koh
TN EMC Ltd., 2008-2 Wada, Tama, Tokyo 206-0001, Japan
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