Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy
スポンサーリンク
概要
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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YAMANE Keisuke
Graduate School of Science and Engineering, Yamaguchi University
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UCHIDA Akimi
Graduate School of Science and Engineering, Yamaguchi University
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MIYOSHI Seita
Graduate School of Science and Engineering, Yamaguchi University
関連論文
- Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates
- Growth of Semipolar (1122) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate
- Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O
- Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy
- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiO_xN_y
- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Effect of Misorientation Angle of $r$-Plane Sapphire Substrate on $a$-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy
- Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
- Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
- Self-Separation of Large Freestanding Semipolar \{11\bar{2}2\} GaN Films Using r-Plane Patterned Sapphire Substrates
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire