Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 2012-09-25

著者

• Okada Narihito

  Graduate School Of Science And Engineering Yamaguchi University

• Tadatomo Kazuyuki

  Graduate School Of Science And Engineering Yamaguchi University

• YAMANE Keisuke

  Graduate School of Science and Engineering, Yamaguchi University

• UENO Motohisa

  Graduate School of Science and Engineering, Yamaguchi University

• UCHIDA Katsumi

  Graduate School of Science and Engineering, Yamaguchi University

• FURUYA Hiroshi

  Graduate School of Science and Engineering, Yamaguchi University

関連論文

• Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates
• Growth of Semipolar (1122) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate
• Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O
• Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate
• Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy
• Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
• Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
• Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiO_xN_y
• Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
• Effect of Misorientation Angle of $r$-Plane Sapphire Substrate on $a$-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy
• Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
• Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
• Self-Separation of Large Freestanding Semipolar \{11\bar{2}2\} GaN Films Using r-Plane Patterned Sapphire Substrates
• InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
• InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire

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