Self-Separation of Large Freestanding Semipolar \{11\bar{2}2\} GaN Films Using r-Plane Patterned Sapphire Substrates
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概要
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We have studied the growth of semipolar GaN from the etched sapphire sidewall of a patterned sapphire substrate (PSS). In this work, we grew a thick \{11\bar{2}2\} GaN layer on an r-plane PSS (r-PSS) by hydride vapor phase epitaxy (HVPE) and separated the GaN layer from the r-PSS. We demonstrated the self-separation of the \{11\bar{2}2\} GaN layer from the r-PSS by using a PSS and thick GaN growth. The ease of separation of the GaN layer from the PSS depended on the selective growth area of the sapphire sidewall. Consequently, we obtained a freestanding \{11\bar{2}2\} GaN film of 2-in. diameter. The dark spot density of this film was 2.8\times 10^{7}/cm<sup>2</sup>.
- 2013-08-25
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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YAMANE Keisuke
Graduate School of Science and Engineering, Yamaguchi University
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FURUYA Hiroshi
Graduate School of Science and Engineering, Yamaguchi University
関連論文
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- Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
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- Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
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- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
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- Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire