Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate
スポンサーリンク
概要
- 論文の詳細を見る
GaN was grown on a random-cone patterned sapphire substrate (RC-PSS) fabricated by natural lithography via metalorganic vapor phase epitaxy. Scanning and transmission electron microscopies were performed to investigate the growth mode of the GaN layer on the RC-PSS. Some dislocations generated at the GaN/sapphire interface were bent and annihilated by lateral overgrowth and selective area growth. Dislocation density decreased with increasing cone density. The external quantum efficiency of the light-emitting diode on the RC-PSS was 49.5% at a current injection of 20 mA. An improvement in output power was indicated by increases in light extraction efficiency and crystalline quality owing to the use of the RC-PSS. The light extraction efficiency of the LED on the RC-PSS was estimated to be 86.8%.
- 2009-12-25
著者
-
Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
-
Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
-
Watanabe Kazuhiro
Institute Of Biological Science Nippon Paper Co. Ltd.
-
Murata Tohru
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
-
Chang Huang
Institute of Semiconductor Technologies, ULVAC, Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
-
Okada Narihito
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
関連論文
- Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
- Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates
- Growth of Semipolar (1122) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate
- セルロ-スなど多糖のスルホアルキル誘導体の調製とその抗エイズ活性の測定〔英文〕
- Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O
- Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy
- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiO_xN_y
- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Effect of Misorientation Angle of $r$-Plane Sapphire Substrate on $a$-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy
- Direct Growth of $a$-Plane GaN on $r$-Plane Sapphire Substrate by Metalorganic Vapor Phase Epitaxy
- Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
- Self-Separation of Large Freestanding Semipolar \{11\bar{2}2\} GaN Films Using r-Plane Patterned Sapphire Substrates
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Selective formation of 2-phenylethanol in the homologation of benzyl alcohol.
- Kinetics and mechanistic study of the methanol homologation with cobalt-ruthenium mixed catalyst.
- Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire