Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire
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概要
- 論文の詳細を見る
The direct growth of $m$-plane GaN via metal--organic vapor phase epitaxy has been demonstrated using a deep-groove-patterned $a$-plane sapphire substrate with a $c$-plane sidewall and terrace covered with a SiO2 mask. The GaN layer was laterally grown from the etched $c$-plane sidewall in the $a$-plane sapphire substrate, which means $c$-direction growth of GaN. According to the epitaxial relationship which $m$-axis of GaN layer corresponds to $a$-axis of $c$-plane sapphire when using a low-temperature buffer layer, $m$-plane GaN was grown with an epitaxial lateral overgrowth from the $c$-plane sidewall of the $a$-plane sapphire.
- Japan Society of Applied Physicsの論文
- 2008-11-25
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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KAWASHIMA Yuji
Graduate School of Science and Engineering, Yamaguchi University
関連論文
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- Effect of Misorientation Angle of $r$-Plane Sapphire Substrate on $a$-Plane GaN Grown by Metalorganic Vapor Phase Epitaxy
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- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
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- Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire