Okada Narihito | Graduate School Of Science And Engineering Yamaguchi University
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概要
関連著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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YAMANE Keisuke
Graduate School of Science and Engineering, Yamaguchi University
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MIYOSHI Seita
Graduate School of Science and Engineering, Yamaguchi University
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UCHIDA Katsumi
Graduate School of Science and Engineering, Yamaguchi University
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FURUYA Hiroshi
Graduate School of Science and Engineering, Yamaguchi University
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UENO Motohisa
Graduate School of Science and Engineering, Yamaguchi University
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KURISU Akihiro
Graduate School of Science and Engineering, Yamaguchi University
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UCHIDA Akimi
Graduate School of Science and Engineering, Yamaguchi University
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Egami Takuya
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Inomoto Ryo
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Nishimiya Tomoyasu
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Hiramoto Michihiro
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Motoyama Shin-ichi
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Hiramoto Michihiro
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Nishimiya Tomoyasu
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Murakami Kazuma
Graduate School Of Agriculture Kyoto University
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Kuwano Noriyuki
Department Of Applied Science For Electronics And Materials Interdisciplinary Graduate School Of Eng
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Watanabe Kazuhiro
Institute Of Biological Science Nippon Paper Co. Ltd.
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Murata Tohru
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Chang Huang
Institute of Semiconductor Technologies, ULVAC, Inc., 1220-1 Suyama, Susono, Shizuoka 410-1231, Japan
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Kuwano Noriyuki
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Kobayashi Yoshihiko
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ishida Fumio
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mitsui Yasutomo
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mangyo Hirotaka
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ono Hiroyuki
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ikenaga Kazutada
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Yano Yoshiki
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Matsumoto Koh
TN EMC Ltd., 2008-2 Wada, Tama, Tokyo 206-0001, Japan
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KAWASHIMA Yuji
Graduate School of Science and Engineering, Yamaguchi University
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Okada Narihito
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Okada Narihito
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Takami Masaki
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Yamada Yoichi
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Yamane Keisuke
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Uchida Katsumi
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Tadatomo Kazuyuki
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Oshita Hiroyasu
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
著作論文
- Growth mechanism of nonpolar and semipolar GaN layers from sapphire sidewalls on various maskless patterned sapphire substrates
- Growth of Semipolar (1122) GaN Layer by Controlling Anisotropic Growth Rates in r-Plane Patterned Sapphire Substrate
- Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O
- Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy
- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Fabrication and Evaluation of GaN Layer Composed of m- and \{10\bar{1}1\} Facet Structure
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiO_xN_y
- Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
- Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
- Self-Separation of Large Freestanding Semipolar \{11\bar{2}2\} GaN Films Using r-Plane Patterned Sapphire Substrates
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire