Yano Yoshiki | Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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概要
- Yano Yoshikiの詳細を見る
- 同名の論文著者
- Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japanの論文著者
関連著者
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Yano Yoshiki
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Matsumoto Koh
TN EMC Ltd., 2008-2 Wada, Tama, Tokyo 206-0001, Japan
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Tabuchi Toshiya
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan
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Tokunaga Hiroki
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan
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Yamaoka Yuya
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan
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UBUKATA Akinori
Taiyo Nippon Sanso Corporation
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YAMAOKA Yuya
Taiyo Nippon Sanso Corporation
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Kobayashi Yoshihiko
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ishida Fumio
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mitsui Yasutomo
Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
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Mangyo Hirotaka
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ono Hiroyuki
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Ikenaga Kazutada
Taiyo Nippon Sanso Corporation, 1-3-26 Koyama, Shinagawa, Tokyo 142-8558, Japan
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Shimamura Hayato
TN EMC Ltd., 2008-2 Wada, Tama-city, Tokyo 206-0001, Japan
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Ubukata Akinori
Taiyo Nippon Sanso Corporation, 10 Ohkubo, Tsukuba, Ibaraki 300-2611, Japan
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CHRISTY Dennis
Research Center for Nano-Device and System, Nagoya Institute of Technology
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SHIMAMURA Hayato
Taiyo Nippon Sanso EMC Ltd.
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MATSUMOTO Koh
Taiyo Nippon Sanso EMC Ltd.
著作論文
- Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O
- Control of Thickness and Composition Variation of AlGaN/GaN on 6- and 8-in. Substrates Using Multiwafer High-Growth-Rate Metal Organic Chemical Vapor Deposition Tool
- Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200mm Silicon (111) Substrate