MIYOSHI Seita | Graduate School of Science and Engineering, Yamaguchi University
スポンサーリンク
概要
関連著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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YAMANE Keisuke
Graduate School of Science and Engineering, Yamaguchi University
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MIYOSHI Seita
Graduate School of Science and Engineering, Yamaguchi University
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UCHIDA Akimi
Graduate School of Science and Engineering, Yamaguchi University
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Egami Takuya
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Inomoto Ryo
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Nishimiya Tomoyasu
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Hiramoto Michihiro
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Motoyama Shin-ichi
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Hiramoto Michihiro
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Nishimiya Tomoyasu
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Kuwano Noriyuki
Department Of Applied Science For Electronics And Materials Interdisciplinary Graduate School Of Eng
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UCHIDA Katsumi
Graduate School of Science and Engineering, Yamaguchi University
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Kuwano Noriyuki
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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Yamane Keisuke
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Uchida Katsumi
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
著作論文
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiOxNy
- Improved External Quantum Efficiency and Controlled Light Distribution for Light-Emitting Diodes with Cone Array Composed of SiO_xN_y
- Evaluation of \{11\bar{2}2\} Semipolar Multiple Quantum Wells Using Relaxed Thick InGaN Layers with Various In Compositions
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)