InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
スポンサーリンク
概要
- 論文の詳細を見る
GaN-based light-emitting diodes (LEDs) were fabricated on nano patterned sapphire substrates (nano-PSSs) by nanoimprint (NIP) lithography. A nano-PSS with a pillar height of more than 600 nm was achieved. The surface emission of the LEDs was strongly affected by pillar height, and the surface emission intensity was highest at a pillar height of 250 nm. In contrast, the external quantum efficiency of the LEDs on the nano-PSSs with diameters of 100 and 450 nm was approximately 30% higher than that on a flat sapphire substrate, which is similar to that on a conventional PSS.
- 2013-11-25
著者
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Okada Narihito
Graduate School Of Science And Engineering Yamaguchi University
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Tadatomo Kazuyuki
Graduate School Of Science And Engineering Yamaguchi University
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YAMANE Keisuke
Graduate School of Science and Engineering, Yamaguchi University
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MIYOSHI Seita
Graduate School of Science and Engineering, Yamaguchi University
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Egami Takuya
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Inomoto Ryo
Graduate School of Science and Engineering, Yamaguchi University, Ube, Yamaguchi 755-8611, Japan
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Nishimiya Tomoyasu
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Hiramoto Michihiro
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Motoyama Shin-ichi
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Hiramoto Michihiro
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
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Nishimiya Tomoyasu
R&D Department, SAMCO Inc., Kyoto 612-8443, Japan
関連論文
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- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography
- InGaN-Based Light-Emitting Diodes Fabricated on Nano Patterned Sapphire Substrates with Pillar Height of More than 600 nm by Nanoimprint Lithography (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
- Direct Growth of $m$-plane GaN with Epitaxial Lateral Overgrowth from $c$-plane Sidewall of $a$-plane Sapphire